v rrm = 20 v - 100 v i f = 120 a features ? high surge capability d-67 package ? types up to 100 v v rrm parameter symbol MBRH12020 (r) mbrh12030 (r) unit repetitive peak reverse v 20 30 v MBRH12020 thru mbrh12040r mbrh12040 (r) 35 mbrh12035 (r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) silicon power schottk y diode conditions 40 voltage v rrm 20 30 v rms reverse voltage v rms 14 21 v dc blocking voltage v dc 20 30 v continuous forward current i f 120 120 a operating temperature t j -40 to 175 -40 to 175 c storage temperature t stg -40 to 175 -40 to 175 c parameter symbol MBRH12020 (r) mbrh12030 (r) unit diode forward voltage 0.65 0.65 44 250 250 thermal characteristics thermal resistance, junction - case r thjc 0.8 0.8 c/w 250 a 2000 electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm reverse current i r v f v r = 20 v, t j = 25 c i f = 120 a, t j = 25 c t c 136 c conditions 35 25 2000 2000 -40 to 175 120 120 2000 -40 to 175 mbrh12040 (r) 44 mbrh12035 (r) 0.8 v r = 20 v, t j = 125 c 0.8 0.65 0.65 250 ma v -40 to 175 -40 to 175 t c = 25 c, t p = 8.3 ms 40 28 40 35 www.genesicsemi.com 1
MBRH12020 thru mbrh12040r www.genesicsemi.com 2
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